Statistical comparisons of data on band-gap narrowing in heavily doped silicon: Electrical and optical measurements

A system of subroutines for iteratively reweighted least squares (IRLS) computations has been applied to the published measured and theoretical data on band-gap narrowing in heavily doped silicon. The data include electrical and optical measurements at room temperature, photoluminescence and optical...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 1984-05, Vol.55 (10), p.3582-3587
Main Authors: Bennett, Herbert S., Wilson, Charles L.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c237t-bcde3ae6e0588f0ef3c1456c0c38ecbcfecb369b94b5bbf064615c820bcf80cd3
cites cdi_FETCH-LOGICAL-c237t-bcde3ae6e0588f0ef3c1456c0c38ecbcfecb369b94b5bbf064615c820bcf80cd3
container_end_page 3587
container_issue 10
container_start_page 3582
container_title Journal of applied physics
container_volume 55
creator Bennett, Herbert S.
Wilson, Charles L.
description A system of subroutines for iteratively reweighted least squares (IRLS) computations has been applied to the published measured and theoretical data on band-gap narrowing in heavily doped silicon. The data include electrical and optical measurements at room temperature, photoluminescence and optical measurements for temperatures below 35 K, and theoretical calculations at 300 and 0 K. The IRLS procedure allows a clear graphical comparison of the various experimental and theoretical data in band-gap narrowing to be made. The results are (1) band-gap changes determined by the optical absorption are consistent at both 300 K and at temperatures below 35 K with recent theoretical calculations, (2) the electrical and optical measurements are not consistent with each other, and (3) the low temperature optical absorption data and the photoluminescence data are not consistent with each other.
doi_str_mv 10.1063/1.332950
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_24433240</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24433240</sourcerecordid><originalsourceid>FETCH-LOGICAL-c237t-bcde3ae6e0588f0ef3c1456c0c38ecbcfecb369b94b5bbf064615c820bcf80cd3</originalsourceid><addsrcrecordid>eNotkMtOwzAQRS0EEqUg8QleITYp4zhJHXaoKg-pEgtgHTmTSTFK7GA7oP49gbCZu5h7z-IwdilgJaCQN2IlZVrmcMQWAlSZrPMcjtkCIBWJKtflKTsL4QNACCXLBQsvUUcTokHdcXT9oL0JzgbuWt7oqLmzvNa2SfZ64FZ7776N3XNj-TvpL9MdeOMGangwnUFnb_m2I4z-DzfNuBtmdE86jJ56sjGcs5NWd4Eu_nPJ3u63r5vHZPf88LS52yWYynVMamxIaioIcqVaoFaiyPICAaUirLGdjizKuszqvK5bKLJC5KhSmF4KsJFLdjVzB-8-Rwqx6k1A6jptyY2hSrNscpXBVLyei-hdCJ7aavCm1_5QCah-rVaimq3KH4CWbKw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24433240</pqid></control><display><type>article</type><title>Statistical comparisons of data on band-gap narrowing in heavily doped silicon: Electrical and optical measurements</title><source>AIP Digital Archive</source><creator>Bennett, Herbert S. ; Wilson, Charles L.</creator><creatorcontrib>Bennett, Herbert S. ; Wilson, Charles L.</creatorcontrib><description>A system of subroutines for iteratively reweighted least squares (IRLS) computations has been applied to the published measured and theoretical data on band-gap narrowing in heavily doped silicon. The data include electrical and optical measurements at room temperature, photoluminescence and optical measurements for temperatures below 35 K, and theoretical calculations at 300 and 0 K. The IRLS procedure allows a clear graphical comparison of the various experimental and theoretical data in band-gap narrowing to be made. The results are (1) band-gap changes determined by the optical absorption are consistent at both 300 K and at temperatures below 35 K with recent theoretical calculations, (2) the electrical and optical measurements are not consistent with each other, and (3) the low temperature optical absorption data and the photoluminescence data are not consistent with each other.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.332950</identifier><language>eng</language><ispartof>Journal of applied physics, 1984-05, Vol.55 (10), p.3582-3587</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c237t-bcde3ae6e0588f0ef3c1456c0c38ecbcfecb369b94b5bbf064615c820bcf80cd3</citedby><cites>FETCH-LOGICAL-c237t-bcde3ae6e0588f0ef3c1456c0c38ecbcfecb369b94b5bbf064615c820bcf80cd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Bennett, Herbert S.</creatorcontrib><creatorcontrib>Wilson, Charles L.</creatorcontrib><title>Statistical comparisons of data on band-gap narrowing in heavily doped silicon: Electrical and optical measurements</title><title>Journal of applied physics</title><description>A system of subroutines for iteratively reweighted least squares (IRLS) computations has been applied to the published measured and theoretical data on band-gap narrowing in heavily doped silicon. The data include electrical and optical measurements at room temperature, photoluminescence and optical measurements for temperatures below 35 K, and theoretical calculations at 300 and 0 K. The IRLS procedure allows a clear graphical comparison of the various experimental and theoretical data in band-gap narrowing to be made. The results are (1) band-gap changes determined by the optical absorption are consistent at both 300 K and at temperatures below 35 K with recent theoretical calculations, (2) the electrical and optical measurements are not consistent with each other, and (3) the low temperature optical absorption data and the photoluminescence data are not consistent with each other.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><recordid>eNotkMtOwzAQRS0EEqUg8QleITYp4zhJHXaoKg-pEgtgHTmTSTFK7GA7oP49gbCZu5h7z-IwdilgJaCQN2IlZVrmcMQWAlSZrPMcjtkCIBWJKtflKTsL4QNACCXLBQsvUUcTokHdcXT9oL0JzgbuWt7oqLmzvNa2SfZ64FZ7776N3XNj-TvpL9MdeOMGangwnUFnb_m2I4z-DzfNuBtmdE86jJ56sjGcs5NWd4Eu_nPJ3u63r5vHZPf88LS52yWYynVMamxIaioIcqVaoFaiyPICAaUirLGdjizKuszqvK5bKLJC5KhSmF4KsJFLdjVzB-8-Rwqx6k1A6jptyY2hSrNscpXBVLyei-hdCJ7aavCm1_5QCah-rVaimq3KH4CWbKw</recordid><startdate>19840515</startdate><enddate>19840515</enddate><creator>Bennett, Herbert S.</creator><creator>Wilson, Charles L.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19840515</creationdate><title>Statistical comparisons of data on band-gap narrowing in heavily doped silicon: Electrical and optical measurements</title><author>Bennett, Herbert S. ; Wilson, Charles L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c237t-bcde3ae6e0588f0ef3c1456c0c38ecbcfecb369b94b5bbf064615c820bcf80cd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1984</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bennett, Herbert S.</creatorcontrib><creatorcontrib>Wilson, Charles L.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bennett, Herbert S.</au><au>Wilson, Charles L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Statistical comparisons of data on band-gap narrowing in heavily doped silicon: Electrical and optical measurements</atitle><jtitle>Journal of applied physics</jtitle><date>1984-05-15</date><risdate>1984</risdate><volume>55</volume><issue>10</issue><spage>3582</spage><epage>3587</epage><pages>3582-3587</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>A system of subroutines for iteratively reweighted least squares (IRLS) computations has been applied to the published measured and theoretical data on band-gap narrowing in heavily doped silicon. The data include electrical and optical measurements at room temperature, photoluminescence and optical measurements for temperatures below 35 K, and theoretical calculations at 300 and 0 K. The IRLS procedure allows a clear graphical comparison of the various experimental and theoretical data in band-gap narrowing to be made. The results are (1) band-gap changes determined by the optical absorption are consistent at both 300 K and at temperatures below 35 K with recent theoretical calculations, (2) the electrical and optical measurements are not consistent with each other, and (3) the low temperature optical absorption data and the photoluminescence data are not consistent with each other.</abstract><doi>10.1063/1.332950</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 1984-05, Vol.55 (10), p.3582-3587
issn 0021-8979
1089-7550
language eng
recordid cdi_proquest_miscellaneous_24433240
source AIP Digital Archive
title Statistical comparisons of data on band-gap narrowing in heavily doped silicon: Electrical and optical measurements
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T17%3A35%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Statistical%20comparisons%20of%20data%20on%20band-gap%20narrowing%20in%20heavily%20doped%20silicon:%20Electrical%20and%20optical%20measurements&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Bennett,%20Herbert%20S.&rft.date=1984-05-15&rft.volume=55&rft.issue=10&rft.spage=3582&rft.epage=3587&rft.pages=3582-3587&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.332950&rft_dat=%3Cproquest_cross%3E24433240%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c237t-bcde3ae6e0588f0ef3c1456c0c38ecbcfecb369b94b5bbf064615c820bcf80cd3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=24433240&rft_id=info:pmid/&rfr_iscdi=true