Structural and galvanomagnetic properties of thin antimony films

• Published in: Thin solid films 1984-01, Vol.111 (3), p.235-248
• Main Authors: Mojejko-Kotlińska, K., Subotowicz, M.
• Format: Article
• Language: English
• Subjects: Analysing. Testing. Standards; Applied sciences; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Measurement of properties and materials state; Metals, semimetals and alloys; Metals. Metallurgy; Nondestructive testing; Physics; Specific materials; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(84)90145-7

The structural and electrical properties of thin antimony films evaporated onto glass substrates were studied. The influence of the deposition conditions (in particular the substrate temperature and the evaporation rate) on the condensation mechanism and the shape, size and orientation of the crystallites was determined. The structure of the films was studied by transmission electron microscopy. The degree of texturization of the films was also determined. Measurements of the electrical resistivity were carried out over the temperature range 4.2–300 K; the Hall effect and the magnetoresistance were measured at 77 and 300 K. From these data the electrical conductivity σ, the temperature coefficient of resistivity β, the Hall coefficient R H, the mobilities μ e and μ h of electrons and holes and their respective concentrations ( n = p) were determined for films of various structures and thicknesses. The influence of the structure on the electrical properties of thin antimony films was observed. The results obtained were analysed on the basis of the Fuchs-Sondheimer and Mayadas-Schatzkes theories. The mean free path of the carriers as well as the scattering parameters p at the film surface and R at the grain boundaries were determined.