Multi-level flash memory device based on stacked anisotropic ReS2–boron nitride–graphene heterostructures

• Published in: Nanoscale 2020-09, Vol.12 (36), p.18800-18806
• Main Authors: Wu, Enxiu, Xie, Yuan, Wang, Shijie, Zhang, Daihua, Hu, Xiaodong, Liu, Jing
• Format: Article
• Language: English
• Subjects: Boron nitride; Charge transport; Data storage; Electrical properties; Flash memory (computers); Graphene; Heterostructures; Memory devices; Power consumption; Storage capacity; Two dimensional materials
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/d0nr03965a

Charge-trapping memory devices based on two-dimensional (2D) material heterostructures possess an atomically thin structure and excellent charge transport capability, making them promising candidates for next-generation flash memories to achieve miniaturized size, high storage capacity, fast switch speed, and low power consumption. Here, we report a nonvolatile floating-gate memory device based on an ReS2/boron nitride/graphene heterostructure. The implemented ReS2 memory device displays a large memory window exceeding 100 V, leading to an ultrahigh current ratio over 108 between programming and erasing states. The ReS2 memory device also exhibits an ultrafast switch speed of 1 μs. In addition, the device can endure hundreds of switching cycles and shows stable retention characteristics with ∼40% charge remaining after 10 years. More importantly, taking advantage of its anisotropic electrical properties, a single ReS2 flake can achieve direction-sensitive multi-level data storage to enhance the data storage density. On the basis of these characteristics, the proposed ReS2 memory device is potentially able to serve the entire memory device hierarchy, meeting the need for scalability, capacity, speed, retention, and endurance at each level.