GaAs-AlAs monolithic microresonator arrays

Monolithic optical logic devices 1.5–5 μm across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry–Perot structure grown by molecular beam epitaxy. They show reduced energy requirements (more than an order of magnitude smaller than the unetched heterostructure), uniform response ove...

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Bibliographic Details
Published in:Applied physics letters 1987-07, Vol.51 (2), p.94-96
Main Authors: JEWELL, J. L, SCHERER, A, MCCALL, S. L, GODDARD, A. C, ENGLISCH, J. H
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Miscellaneous
Optical and optoelectronic circuits
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Summary:Monolithic optical logic devices 1.5–5 μm across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry–Perot structure grown by molecular beam epitaxy. They show reduced energy requirements (more than an order of magnitude smaller than the unetched heterostructure), uniform response over small arrays, negligible crosstalk at 3 μm center-center spacing, ∼150 ps recovery time, and thermal stability at 82 MHz operating frequency. All experiments were performed at room temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.98607