Time-resolved measurement of hole sweepout in a GaAs photoconductor

A nonlinear luminescence technique is used to measure hole sweepout in a GaAs photoconductor at room temperature. The measured sweepout time for an applied field of 20 kV/cm corresponds to an average hole velocity of 2.0×106 cm/s. A simple model for extracting the photoexcited population decay from...

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Bibliographic Details
Published in:Applied physics letters 1984, Vol.44 (1), p.87-89
Main Authors: VON LEHMEN, A, BALLANTYNE, J. M
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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Summary:A nonlinear luminescence technique is used to measure hole sweepout in a GaAs photoconductor at room temperature. The measured sweepout time for an applied field of 20 kV/cm corresponds to an average hole velocity of 2.0×106 cm/s. A simple model for extracting the photoexcited population decay from the experimental data is described.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.94563