hcp-to-fcc transition in silicon at 78 GPa and studies to 100 GPa

The pressure-induced phase sequence of silicon has been studied up to 100 GPa by energy-dispersive X-ray diffraction techniques. A new phase transition from hexagonal close-packed to face-centered cubic was observed at a volume compression of V/V(0) = 0.481 + or - 0.005 and 78 + or - 3 GPa, in excel...

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Bibliographic Details
Published in:Physical review letters 1987-02, Vol.58 (8), p.775-777
Main Authors: DUCLOS, S. J, VOHRA, Y. K, RUOFF, A. L
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Crystalline state (including molecular motions in solids)
Crystallographic aspects of phase transformations
pressure effects
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Summary:The pressure-induced phase sequence of silicon has been studied up to 100 GPa by energy-dispersive X-ray diffraction techniques. A new phase transition from hexagonal close-packed to face-centered cubic was observed at a volume compression of V/V(0) = 0.481 + or - 0.005 and 78 + or - 3 GPa, in excellent agreement with first-principles calculations of the phase stability of silicon at high pressures. This represents the lowest atomic-number material for which a structural determination has been made up to 100 GPa. (Author)
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.58.775