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Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs Heterostructures
The picosecond time dependence of luminescence from a two-dimensional electron system following absorption of an ultrashort light pulse is studied. From measurements the temporal evolution of the carrier temperature is determined, and it is found that the cooling of hot carriers is suppressed by a f...
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Published in: | Physical review letters 1984-11, Vol.53 (19), p.1841-1844 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The picosecond time dependence of luminescence from a two-dimensional electron system following absorption of an ultrashort light pulse is studied. From measurements the temporal evolution of the carrier temperature is determined, and it is found that the cooling of hot carriers is suppressed by a factor 60 below that predicted on a three-dimensional nondegenerate-electron model. Additionally, the electron-hole radiative lifetime is determined, invoking a hole trap to explain shortened luminscence lifetimes at low carrier densities. |
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ISSN: | 0031-9007 |
DOI: | 10.1103/physrevlett.53.1841 |