High-power conversion efficiency quantum well diode lasers

cw power conversion efficiencies of 57% have been obtained on uncoated diode lasers emitting nearly 300 mW per facet. This performance is achieved by using a low-resistance graded index separate confinement single quantum well AlGaAs/GaAs structure with high (84%) differential quantum efficiency and...

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Bibliographic Details
Published in:Applied physics letters 1987-10, Vol.51 (17), p.1318-1319
Main Authors: WATERS, R. G, WAGNER, D. K, HILL, D. S, TIHANYI, P. L, VOLLMER, B. J
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:cw power conversion efficiencies of 57% have been obtained on uncoated diode lasers emitting nearly 300 mW per facet. This performance is achieved by using a low-resistance graded index separate confinement single quantum well AlGaAs/GaAs structure with high (84%) differential quantum efficiency and low threshold current.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.98715