Ohmic contacts to n-GaAs using In/Pd metallization

Ohmic contacts to n-GaAs (Si doped at 2×1018 cm−3) with contact resistances of 0.7–1.5×10−6 Ω cm2 have been formed with deposited layers of In and Pd. The layers were sequentially evaporated and then annealed at 500 °C for 20 s to form In3Pd and a top layer of In. In addition a thin (≊200 Å) reacted...

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Bibliographic Details
Published in:Applied physics letters 1987-08, Vol.51 (5), p.326-327
Main Authors: ALLEN, L. H, HUNG, L. S, KAVANAGH, K. L, PHILLIPS, J. R, YU, A. J, MAYER, J. W
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Ohmic contacts to n-GaAs (Si doped at 2×1018 cm−3) with contact resistances of 0.7–1.5×10−6 Ω cm2 have been formed with deposited layers of In and Pd. The layers were sequentially evaporated and then annealed at 500 °C for 20 s to form In3Pd and a top layer of In. In addition a thin (≊200 Å) reacted layer was formed at the GaAs interface. Uniform interface morphology was observed with no evidence of localized reaction.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.98429