Electrical and photovoltaic properties of indium-tin-oxide/p-InSe/Au solar cells

Conditions for efficiency improvement and optimization in indium-tin-oxide/p-indium-selenide solar cells are discussed in this paper. This aim is achieved by using low-resistivity p-indium-selenide and by incorporating a back-surface-field contact. This contact is insured by a p-indium selenide/gold...

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Bibliographic Details
Published in:Journal of applied physics 1987-08, Vol.62 (4), p.1477-1483
Main Authors: MARTINEZ-PASTOR, J, SEGURA, A, VALDES, J. L, CHEVY, A
Format: Article
Language:English
Subjects:
Applied sciences
Exact sciences and technology
Other techniques and industries
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Summary:Conditions for efficiency improvement and optimization in indium-tin-oxide/p-indium-selenide solar cells are discussed in this paper. This aim is achieved by using low-resistivity p-indium-selenide and by incorporating a back-surface-field contact. This contact is insured by a p-indium selenide/gold barrier whose rectifying behavior is explained through the complex impurity structure of p-indium-selenide. Electrical and photovoltaic properties of the cells are also reported. The efficiency parameters under AM1 simulated conditions have been improved up to 32 mA/cm2 for the short-circuit current density, 0.58 V for the open-circuit voltage, and 0.63 for the filling factor. As a result, solar efficiencies larger than 10% in annealed cells and 8% in unannealed ones have been attained. The limitations of these devices are discussed by investigating the dependence of electrical and efficiency parameters in function of photon flux and temperature.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.339627