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AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio
We report the largest peak-to-valley current (PVC) ratios to date from AlGaAs/GaAs double barrier (either alloy barrier or superlattice barrier) diodes. PVC ratios as high as 3.6 and 21.7 were obtained from an AlAs/GaAs superlattice barrier structure at 300 and 77 K, respectively. In an alloy barrie...
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Published in: | Applied physics letters 1987-07, Vol.51 (2), p.121-123 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We report the largest peak-to-valley current (PVC) ratios to date from AlGaAs/GaAs double barrier (either alloy barrier or superlattice barrier) diodes. PVC ratios as high as 3.6 and 21.7 were obtained from an AlAs/GaAs superlattice barrier structure at 300 and 77 K, respectively. In an alloy barrier structure with x=0.42 (x=0.3), PVC ratios of 3.9 (2.2) and 14.3 (7.0) were observed at 300 and 77 K, respectively. We attribute these excellent results to a ‘‘two-step’’ spacer layer incorporated in the devices studied which facilitated the growth of high material quality. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.98588 |