Symmetry induced phonon renormalization in few layers of 2H-MoTe2 transistors: Raman and first-principles studies

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Published in:Nanotechnology 2021-01, Vol.32 (4), p.045202-045202
Main Authors: Das, Subhadip, Debnath, Koyendrila, Chakraborty, Biswanath, Singh, Anjali, Grover, Shivani, Muthu, D V S, Waghmare, U V, Sood, A K
Format: Article
Language:English
Subjects:
electron–phonon coupling
field-effect transistor
first-principles density functional theory
hole doping
MoTe
Raman spectroscopy
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container_issue 4
container_start_page 045202
container_title Nanotechnology
container_volume 32
creator Das, Subhadip
Debnath, Koyendrila
Chakraborty, Biswanath
Singh, Anjali
Grover, Shivani
Muthu, D V S
Waghmare, U V
Sood, A K
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doi_str_mv 10.1088/1361-6528/abbfd6
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subjects electron–phonon coupling
field-effect transistor
first-principles density functional theory
hole doping
MoTe
Raman spectroscopy
title Symmetry induced phonon renormalization in few layers of 2H-MoTe2 transistors: Raman and first-principles studies
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