Chemical vapour deposition of silicon carbide and its applications

The coating of various substrate materials with thin layers of silicon carbide (SiC) and its applications were investigated. SiC was prepared by a chemical vapour deposition process using a volatile silane derivative, hydrogen and nitrogen in the temperature range 1073–1473 K. By changing the parame...

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Bibliographic Details
Published in:Thin solid films 1985-01, Vol.126 (3), p.313-318
Main Author: Brutsch, R
Format: Article
Language:English
Subjects:
Applied sciences
Exact sciences and technology
Metals. Metallurgy
Nonmetallic coatings
Production techniques
Surface treatment
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Summary:The coating of various substrate materials with thin layers of silicon carbide (SiC) and its applications were investigated. SiC was prepared by a chemical vapour deposition process using a volatile silane derivative, hydrogen and nitrogen in the temperature range 1073–1473 K. By changing the parameters of the chemical reaction, the composition of the deposit as well as the mechanical properties such as hardness can be changed. The results and some applications of SiC coatings on hard metals are presented.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(85)90326-8