Zinc Doping of MOCVD GaAs

A study has been made of zinc doping in the TMG/AsH 3 system from 500 to 800°C. Diethylzinc (DEZ) and dimethylzinc (DMZ) dopant sources have been compared. Three distinct temperature regions have been identified; 500 to 575°C, 575 to 675°C and 675 to 800°C. The dopant incorporation energies in each...

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Bibliographic Details
Published in:Journal of crystal growth 1984-09, Vol.68 (1), p.44-47
Main Author: Glew, R.W.
Format: Article
Language:English
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Summary:A study has been made of zinc doping in the TMG/AsH 3 system from 500 to 800°C. Diethylzinc (DEZ) and dimethylzinc (DMZ) dopant sources have been compared. Three distinct temperature regions have been identified; 500 to 575°C, 575 to 675°C and 675 to 800°C. The dopant incorporation energies in each region are different and between 500 and 575°C the hole concentration is temperature independent. Metalorganic zinc compounds appear to exhibit a catalytic effect so that good quality layers can be grown at substrate temperatures as low as 500°C. The temperature dependence of growth rate of zinc doped layers using DEZ is different from DMZ. The hole concentration increases superlinearly with dopant concentration for DMZ and sublinearly for DEZ. In addition the epitaxial growth rate is affected by the dopant partial pressure.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(84)90395-6