Microwave performance of InAlAs/InGaAs/InP MODFET's

Modulation-doped InAlAs/InGaAs/InP structures were grown by molecular beam epitaxy (MBE) and fabricated into FET's with excellent RF gain performance. The intrinsic transconductance was about 400 mS/mm at 300 K. Current gain cutoff frequencies of up to 26.5 GHz were obtained in 1-µm gate device...

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Bibliographic Details
Published in:IEEE electron device letters 1987-01, Vol.8 (1), p.24-26
Main Authors: Peng, C.K., Aksun, M.I., Ketterson, A.A., Morkoc, H., Gleason, K.R.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Electronics And Electrical Engineering
Epitaxial layers
Exact sciences and technology
FETs
HEMTs
Indium compounds
Indium gallium arsenide
Indium phosphide
MODFETs
Molecular beam epitaxial growth
Performance gain
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Modulation-doped InAlAs/InGaAs/InP structures were grown by molecular beam epitaxy (MBE) and fabricated into FET's with excellent RF gain performance. The intrinsic transconductance was about 400 mS/mm at 300 K. Current gain cutoff frequencies of up to 26.5 GHz were obtained in 1-µm gate devices. Extremely small S 12 and large S 21 led to a very large f_{\max} of 62 GHz. These results represent the best reported figures for 1-µm devices in this material system and slightly better than those obtained in recently developed pseudomorphic modulation-doped field effect transistors (MODFET's).
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26538