Improved GaAs power FET Performance using Be Co-implantation

Be co-implantation following the standard Si donor implantation improves the performance of directly implanted GaAs power FET's. The doping profile abruptness increases from 88 to 48 nm/decade. The device efficiency increases by at least 15 percent and the maximum output power by about 10 perce...

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Bibliographic Details
Published in:IEEE electron device letters 1987-03, Vol.8 (3), p.116-117
Main Authors: Macksey, H.M., Brehm, G.E., Matteson, S.E.
Format: Article
Language:English
Subjects:
Annealing
Applied sciences
Chemicals
Doping profiles
Electronics
Exact sciences and technology
FETs
Gallium arsenide
Implants
Microelectronic fabrication (materials and surfaces technology)
Power generation
Resists
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Wet etching
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Summary:Be co-implantation following the standard Si donor implantation improves the performance of directly implanted GaAs power FET's. The doping profile abruptness increases from 88 to 48 nm/decade. The device efficiency increases by at least 15 percent and the maximum output power by about 10 percent due to reduction in gate-drain breakdown current.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26571