COMPOSITE-A complete modeling program of silicon technology

A new two-dimensional process modeling program written in Fortran is described. For the first time, this program allows the simulation of all important processing steps occuring in typical sequences involved in the fabrication of integrated circuits such as doping, oxidation, lithography, etching, a...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1985-10, Vol.32 (10), p.1977-1986
Main Authors: Lorenz, J., Pelka, J., Ryssel, H., Sachs, A., Seidl, A., Svoboda, M.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A new two-dimensional process modeling program written in Fortran is described. For the first time, this program allows the simulation of all important processing steps occuring in typical sequences involved in the fabrication of integrated circuits such as doping, oxidation, lithography, etching, and layer deposition. The program possesses a modular structure to allow for easy changing and improvement of process models as well as of mathematical procedures. The program is menu driven to make it easy to use for non-experts and it is readily usable with different computer systems.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1985.22230