Ion beam mixing to produce disordered AlSi superconducting alloys

Multilayered Al/Si films were bombarded with Ar ions at LHe temperature and superconducting transition temperature T c was measured in situ. The highest T c thus obtained was 7.53 K. The systematic studies on samples with different compositions suggest that ion induced disorder might be the main rea...

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Bibliographic Details
Published in:Solid state communications 1987-03, Vol.61 (12), p.791-793
Main Authors: Xi, X-X, Ran, Q-Z, Liu, J-R, Guan, W-Y
Format: Article
Language:English
Subjects:
Analysing. Testing. Standards
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Measurement of properties and materials state
Metals, semimetals and alloys
Metals. Metallurgy
Nondestructive testing
Occurrence, potential candidates
Physics
Specific materials
Superconductivity
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Summary:Multilayered Al/Si films were bombarded with Ar ions at LHe temperature and superconducting transition temperature T c was measured in situ. The highest T c thus obtained was 7.53 K. The systematic studies on samples with different compositions suggest that ion induced disorder might be the main reason for T c enhancement in these AlSi alloys.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(87)90479-0