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Ion beam mixing to produce disordered AlSi superconducting alloys
Multilayered Al/Si films were bombarded with Ar ions at LHe temperature and superconducting transition temperature T c was measured in situ. The highest T c thus obtained was 7.53 K. The systematic studies on samples with different compositions suggest that ion induced disorder might be the main rea...
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| Published in: | Solid state communications 1987-03, Vol.61 (12), p.791-793 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c364t-3eff5d06111c49ea181661829bf2bfd6c4ab40b5231665cff9437c0a0067b79c3 |
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| cites | cdi_FETCH-LOGICAL-c364t-3eff5d06111c49ea181661829bf2bfd6c4ab40b5231665cff9437c0a0067b79c3 |
| container_end_page | 793 |
| container_issue | 12 |
| container_start_page | 791 |
| container_title | Solid state communications |
| container_volume | 61 |
| creator | Xi, X-X Ran, Q-Z Liu, J-R Guan, W-Y |
| description | Multilayered Al/Si films were bombarded with Ar ions at LHe temperature and superconducting transition temperature
T
c
was measured
in situ. The highest
T
c
thus obtained was 7.53 K. The systematic studies on samples with different compositions suggest that ion induced disorder might be the main reason for
T
c
enhancement in these AlSi alloys. |
| doi_str_mv | 10.1016/0038-1098(87)90479-0 |
| format | article |
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T
c
was measured
in situ. The highest
T
c
thus obtained was 7.53 K. The systematic studies on samples with different compositions suggest that ion induced disorder might be the main reason for
T
c
enhancement in these AlSi alloys.</description><identifier>ISSN: 0038-1098</identifier><identifier>EISSN: 1879-2766</identifier><identifier>DOI: 10.1016/0038-1098(87)90479-0</identifier><identifier>CODEN: SSCOA4</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>Analysing. Testing. Standards ; Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Measurement of properties and materials state ; Metals, semimetals and alloys ; Metals. Metallurgy ; Nondestructive testing ; Occurrence, potential candidates ; Physics ; Specific materials ; Superconductivity</subject><ispartof>Solid state communications, 1987-03, Vol.61 (12), p.791-793</ispartof><rights>1987</rights><rights>1987 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-3eff5d06111c49ea181661829bf2bfd6c4ab40b5231665cff9437c0a0067b79c3</citedby><cites>FETCH-LOGICAL-c364t-3eff5d06111c49ea181661829bf2bfd6c4ab40b5231665cff9437c0a0067b79c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/0038109887904790$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,777,781,3542,3619,27905,27906,45985,45993</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8139834$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Xi, X-X</creatorcontrib><creatorcontrib>Ran, Q-Z</creatorcontrib><creatorcontrib>Liu, J-R</creatorcontrib><creatorcontrib>Guan, W-Y</creatorcontrib><title>Ion beam mixing to produce disordered AlSi superconducting alloys</title><title>Solid state communications</title><description>Multilayered Al/Si films were bombarded with Ar ions at LHe temperature and superconducting transition temperature
T
c
was measured
in situ. The highest
T
c
thus obtained was 7.53 K. The systematic studies on samples with different compositions suggest that ion induced disorder might be the main reason for
T
c
enhancement in these AlSi alloys.</description><subject>Analysing. Testing. Standards</subject><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Measurement of properties and materials state</subject><subject>Metals, semimetals and alloys</subject><subject>Metals. Metallurgy</subject><subject>Nondestructive testing</subject><subject>Occurrence, potential candidates</subject><subject>Physics</subject><subject>Specific materials</subject><subject>Superconductivity</subject><issn>0038-1098</issn><issn>1879-2766</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAQhi0EEqXwDxgyIARD4Bw7trMgVRUflSoxALPlOGdklMbFThD996S0YmS6093z3sdLyDmFGwpU3AIwlVOo1JWS1xVwWeVwQCZUjUkhhTgkkz_kmJyk9AEAUkk6IbNF6LIazSpb-W_fvWd9yNYxNIPFrPEpxAYjNtmsffFZGtYYbejGZr9FTduGTTolR860Cc_2cUreHu5f50_58vlxMZ8tc8sE73OGzpUNCEqp5RUaqqgQVBVV7YraNcJyU3Ooy4KN9dI6V3EmLRgAIWtZWTYll7u543mfA6Zer3yy2LamwzAkXfCSs6IUI8h3oI0hpYhOr6NfmbjRFPTWL701Q2_N0ErqX780jLKL_XyTrGldNJ316U-rKKsU4yN2t8Nw_PXLY9TJeuwsNj6i7XUT_P97fgBjG336</recordid><startdate>19870301</startdate><enddate>19870301</enddate><creator>Xi, X-X</creator><creator>Ran, Q-Z</creator><creator>Liu, J-R</creator><creator>Guan, W-Y</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19870301</creationdate><title>Ion beam mixing to produce disordered AlSi superconducting alloys</title><author>Xi, X-X ; Ran, Q-Z ; Liu, J-R ; Guan, W-Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-3eff5d06111c49ea181661829bf2bfd6c4ab40b5231665cff9437c0a0067b79c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>Analysing. Testing. Standards</topic><topic>Applied sciences</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Measurement of properties and materials state</topic><topic>Metals, semimetals and alloys</topic><topic>Metals. Metallurgy</topic><topic>Nondestructive testing</topic><topic>Occurrence, potential candidates</topic><topic>Physics</topic><topic>Specific materials</topic><topic>Superconductivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xi, X-X</creatorcontrib><creatorcontrib>Ran, Q-Z</creatorcontrib><creatorcontrib>Liu, J-R</creatorcontrib><creatorcontrib>Guan, W-Y</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Solid state communications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xi, X-X</au><au>Ran, Q-Z</au><au>Liu, J-R</au><au>Guan, W-Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ion beam mixing to produce disordered AlSi superconducting alloys</atitle><jtitle>Solid state communications</jtitle><date>1987-03-01</date><risdate>1987</risdate><volume>61</volume><issue>12</issue><spage>791</spage><epage>793</epage><pages>791-793</pages><issn>0038-1098</issn><eissn>1879-2766</eissn><coden>SSCOA4</coden><abstract>Multilayered Al/Si films were bombarded with Ar ions at LHe temperature and superconducting transition temperature
T
c
was measured
in situ. The highest
T
c
thus obtained was 7.53 K. The systematic studies on samples with different compositions suggest that ion induced disorder might be the main reason for
T
c
enhancement in these AlSi alloys.</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1016/0038-1098(87)90479-0</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0038-1098 |
| ispartof | Solid state communications, 1987-03, Vol.61 (12), p.791-793 |
| issn | 0038-1098 1879-2766 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24543256 |
| source | Backfile Package - Materials Science [YMS]; Backfile Package - Physics General (Legacy) [YPA] |
| subjects | Analysing. Testing. Standards Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Measurement of properties and materials state Metals, semimetals and alloys Metals. Metallurgy Nondestructive testing Occurrence, potential candidates Physics Specific materials Superconductivity |
| title | Ion beam mixing to produce disordered AlSi superconducting alloys |
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