Cation vacancy formation energies in liquid-phase-epitaxial Hg(1-x)Cd(x)Te

It is believed that cation vacancies in Hg(1-x)Cd(x)Te are responsible for the acceptor behavior in p-type conduction. Knowledge of cation vacancy formation energies (Ef) provides important information about the p-type conduction, lattice defects, and temperature stability of electrical behavior. Th...

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Bibliographic Details
Published in:Journal of applied physics 1985-08, Vol.58, p.1470-1473
Main Authors: Shin, S H, Khoshnevisan, M, Morgan-Pond, C, Raghavan, R
Format: Article
Language:English
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Summary:It is believed that cation vacancies in Hg(1-x)Cd(x)Te are responsible for the acceptor behavior in p-type conduction. Knowledge of cation vacancy formation energies (Ef) provides important information about the p-type conduction, lattice defects, and temperature stability of electrical behavior. The present paper is concerned with the results of a study to measure Ef for a number of HgCdTe compositions. The employed procedure involved Hg annealing and rapid quenching to room temperature, followed by Hall measurements at 77 K. The variation of hole concentration was measured as a function of equilibrium overpressure under Hg-saturated conditions in evacuated ampules. The obtained results complement annealing data on bulk Hg(0.6)Cd(0.4)Te reported by Vydyanath (1981) and Schmit and Stelzer (1978), and Hg loss rates and annealing experiments on Hg(1-x)Cd(x)Te reported by Dimiduk et al. (1983).
ISSN:0021-8979