InP depletion-mode microwave MISFET's

Depletion-mode aligned-gate InP MISFET's with gate lengths of 1.5-1 µm have given output power of 1.26-W/mm gate width and power-added efficiencies of up to 40 percent at 4 GHz. At 12 GHz, 0.75-W/mm gate width with 22-percent power-added efficiency was obtained. At 18 GHz, a power output of 331...

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Bibliographic Details
Published in:IEEE electron device letters 1987-02, Vol.8 (2), p.45-47
Main Authors: Gardner, P.D., Narayan, S.Y., Liu, S.G., Bechtle, D., Bibby, T., Capewell, D.R., Colvin, S.D.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitors
Electronics
Exact sciences and technology
Fabrication
Gold
Hysteresis
Indium phosphide
Interface states
Microwave devices
MISFETs
Power generation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Transistors
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Description
Summary:Depletion-mode aligned-gate InP MISFET's with gate lengths of 1.5-1 µm have given output power of 1.26-W/mm gate width and power-added efficiencies of up to 40 percent at 4 GHz. At 12 GHz, 0.75-W/mm gate width with 22-percent power-added efficiency was obtained. At 18 GHz, a power output of 331 mW (0.59 W/mm) with 3.1 dB of gain and 15.7-percent power-added efficiency was measured. An output power of 245 mW (0.44 W/mm) with 3-dB gain and 10.7-percent efficiency was obtained at 20 GHz.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26546