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Nitride light-emitting diodes for cryogenic temperatures

A novel approach to fabricate efficient nitride light-emitting diodes (LEDs) grown on gallium polar surface operating at cryogenic temperatures is presented. We investigate and compare LEDs with standard construction with structures where p-n junction field is inverted through the use of bottom tunn...

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Published in:Optics express 2020-09, Vol.28 (20), p.30299-30308
Main Authors: Chlipala, Mikolaj, Turski, Henryk, Siekacz, Marcin, Pieniak, Katarzyna, Nowakowski-Szkudlarek, Krzesimir, Suski, Tadeusz, Skierbiszewski, Czeslaw
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cited_by cdi_FETCH-LOGICAL-c297t-b4a581782bf96d943d689e6d9c47481a6f8f74a9b7e67a48e9a1ee3dd38aff4e3
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container_end_page 30308
container_issue 20
container_start_page 30299
container_title Optics express
container_volume 28
creator Chlipala, Mikolaj
Turski, Henryk
Siekacz, Marcin
Pieniak, Katarzyna
Nowakowski-Szkudlarek, Krzesimir
Suski, Tadeusz
Skierbiszewski, Czeslaw
description A novel approach to fabricate efficient nitride light-emitting diodes (LEDs) grown on gallium polar surface operating at cryogenic temperatures is presented. We investigate and compare LEDs with standard construction with structures where p-n junction field is inverted through the use of bottom tunnel junction (BTJ). BTJ LEDs show improved turn on voltage, reduced parasitic recombination and increased quantum efficiency at cryogenic temperatures. This is achieved by moving to low resistivity n-type contacts and nitrogen polar-like built-in field with respect to current flow. It inhibits the electron overflow past quantum wells and improves hole injection even at T=12K. Therefore, as cryogenic light sources, BTJ LEDs offer significantly enhanced performance over standard LEDs.
doi_str_mv 10.1364/OE.403906
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title Nitride light-emitting diodes for cryogenic temperatures
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