Dependence of 1/f noise on defects induced in copper films by electron irradiation

When 500 keV electron irradiation was used to induce defects in polycrystalline Cu films maintained at 90K, the spectral density of the 1/f noise voltage across the films increased by as much as one order of magnitude, while the resistivity increased by at most 10%. When the films were annealed at p...

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Bibliographic Details
Published in:Physical review letters 1985-08, Vol.55 (7), p.738-741
Main Authors: PELZ, J, CLARKE, J
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electronic transport in condensed matter
Exact sciences and technology
Materials science
Metals, semimetals and alloys
Noise processes and phenomena
Physics
Specific materials
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Summary:When 500 keV electron irradiation was used to induce defects in polycrystalline Cu films maintained at 90K, the spectral density of the 1/f noise voltage across the films increased by as much as one order of magnitude, while the resistivity increased by at most 10%. When the films were annealed at progressively higher temp., both the 1/f noise and the resistivity were reduced; however, at lower annealing temp., the fractional reduction in the added noise was substantially more than that in the added resistivity. 16 ref.--AA
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.55.738