Efficiency calculations of thin-film GaAs solar cells on Si substrates

Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in...

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Published in:Journal of applied physics 1985-11, Vol.58 (9), p.3601-3606
Main Authors: YAMAGUCHI, M, AMANO, C
Format: Article
Language:English
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Applied sciences
Energy
Exact sciences and technology
Natural energy
Solar energy
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description Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 106 cm−2.
doi_str_mv 10.1063/1.335737
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subjects Applied sciences
Energy
Exact sciences and technology
Natural energy
Solar energy
title Efficiency calculations of thin-film GaAs solar cells on Si substrates
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