Energy Dependence of Proton-Induced Displacement Damage in Gallium Arsenide

Nonionizing energy deposition in gallium arsenide has been calculated for protons with energies ranging from 1 to 1000 MeV. The calculations are compared with new experimental results for ion implanted gallium arsenide resistors and Hall samples irradiated with protons in the energy range 1 to 60 Me...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1987-12, Vol.34 (6), p.1220-1226
Main Authors: Burke, E. A., Dale, C. J., Campbell, A. B., Summers, G. P., Stapor, W. J., Xapsos, M. A., Palmer, T., Zuleeg, R.
Format: Article
Language:English
Subjects:
Conductivity
Electroencephalography
Energy loss
Gallium arsenide
Laboratories
Microelectronics
Protons
Resistors
Silicon
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Summary:Nonionizing energy deposition in gallium arsenide has been calculated for protons with energies ranging from 1 to 1000 MeV. The calculations are compared with new experimental results for ion implanted gallium arsenide resistors and Hall samples irradiated with protons in the energy range 1 to 60 MeV. Results are also compared with recent studies of proton induced displacement damage in silicon.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1987.4337456