Gettering of carbon and oxygen in silicon processing

The control of carbon and oxygen is of great importance in today's silicon materials and device processing, and it will become a critical parameter in the immediate future for VLSI device processing. Although considerable technology and some understanding are available today in the control of o...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1985-01, Vol.132 (7), p.1721-1725
Main Authors: BAILEY, W. E, BOWLING, R. A, BEAN, K. E
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The control of carbon and oxygen is of great importance in today's silicon materials and device processing, and it will become a critical parameter in the immediate future for VLSI device processing. Although considerable technology and some understanding are available today in the control of oxygen in silicon materials through processing, there is little technology and even less understanding of carbon control in silicon wafer processing. We have determined, for high carbon content silicon, that carbon can be gettered to damage sites such as dislocations, stacking faults, and/or wafer surfaces, thus creating a carbon-denuded zone in epitaxial silicon, as will as in bulk Czochralski silicon substrates. The gettering effects of carbon have been investigated using controlled time, temperature, and ambient gas thermal anneals. The characterization of these materials was carried out using chemical etches, Fourier transform infrared spectroscopy, and scanning Auger microprobe analysis.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2114199