Localization effects in a tilted magnetic field. Electron-electron interaction in semimetal films

The localization correction to the conductivity of thin Bi films has been measured as a function of the angle between the magnetic field and the film plane. This dependence is well given by the weak localization theory and permits the wave function phase relaxation time τ ϕ to be found. Comparison o...

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Bibliographic Details
Published in:Solid state communications 1985, Vol.53 (4), p.347-349
Main Authors: Bukhshtab, E.I., Butenko, A.V., Komnik, Yu.F., Pilipenko, V.V.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Galvanomagnetic and other magnetotransport effects
Physics
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Summary:The localization correction to the conductivity of thin Bi films has been measured as a function of the angle between the magnetic field and the film plane. This dependence is well given by the weak localization theory and permits the wave function phase relaxation time τ ϕ to be found. Comparison of the experimental τ ϕ for Bi and Sb films with those calculated for the electron-electron interaction in quasi-two-dimensional disordered systems suggests that it is the main mechanism of inelastic scattering in Bi and Sb films at low temperatures.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(85)90983-4