Effect of selective tungsten as a polysilicon shunt on CMOS ring-oscillator performance

Selective tungsten is applied as a polysilicon shunt to CMOS ring oscillators specifically designed to be interconnect limited. The tungsten shunted ring oscillators operate at a frequency almost twice that of nonshunted oscillators. Shunting of source/drains as well as gates leads to further perfor...

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Bibliographic Details
Published in:IEEE electron device letters 1985-07, Vol.6 (7), p.372-374
Main Authors: Metz, W.A., Szluk, N.J., Miller, G.W., Hayworth, H.O.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit optimization
CMOS technology
Electronics
Exact sciences and technology
Fabrication
Frequency
Histograms
Integrated circuit interconnections
Microelectronic fabrication (materials and surfaces technology)
Production
Ring oscillators
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Tungsten
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Summary:Selective tungsten is applied as a polysilicon shunt to CMOS ring oscillators specifically designed to be interconnect limited. The tungsten shunted ring oscillators operate at a frequency almost twice that of nonshunted oscillators. Shunting of source/drains as well as gates leads to further performance enhancements. Similar improvements are demonstrated for VLSI circuits.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1985.26158