Photon-induced recovery of photoquenched EL2 intracenter absorption in GaAs

After the EL2 absorption band at 1.2 eV is fully photoquenched [i.e., EL2 defect completely transferred from the normal (EL20) to metastable (EL2*) state] it can be partially recovered by photon excitation. This EL2*→EL20 recovery exhibits peaks at 0.80 and 0.90 eV with shoulders at 0.86 and 0.94 eV...

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Bibliographic Details
Published in:Applied physics letters 1987-06, Vol.50 (24), p.1751-1753
Main Author: FISCHER, D. W
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
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Summary:After the EL2 absorption band at 1.2 eV is fully photoquenched [i.e., EL2 defect completely transferred from the normal (EL20) to metastable (EL2*) state] it can be partially recovered by photon excitation. This EL2*→EL20 recovery exhibits peaks at 0.80 and 0.90 eV with shoulders at 0.86 and 0.94 eV. Comparison is made to the previously published photon-induced photoconductivity recovery and the results are used to construct a modified configuration coordinate model for the EL2 defect.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97736