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Effect of carrier gas on structure of plasma polymerized tetrafluoroethylene films

Thin films were polymerized by introducing tetrafluoroethylene gas into the “tail-flame” of a glow discharge of hydrogen or argon used as a carrier gas. Compared with argon, hydrogen gives a higher deposition rate at low discharge power and a lower rate at high discharge power. ESR, ESCA and IR meas...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1985, Vol.24 (1), p.83-86
Main Authors: NAKANO, T, KASAMA, Y, OHKI, Y, YAHAGI, K
Format: Article
Language:English
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Summary:Thin films were polymerized by introducing tetrafluoroethylene gas into the “tail-flame” of a glow discharge of hydrogen or argon used as a carrier gas. Compared with argon, hydrogen gives a higher deposition rate at low discharge power and a lower rate at high discharge power. ESR, ESCA and IR measurements showed that films polymerized using hydrogen as a carrier gas are crosslinked to a higher degree and have more radicals than those polymerized using argon. The former films have higher tan δ values than the latter films. These results arise from the competing processes of polymerization and ablation in the glow-discharge plasma.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.24.83