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Effect of carrier gas on structure of plasma polymerized tetrafluoroethylene films
Thin films were polymerized by introducing tetrafluoroethylene gas into the “tail-flame” of a glow discharge of hydrogen or argon used as a carrier gas. Compared with argon, hydrogen gives a higher deposition rate at low discharge power and a lower rate at high discharge power. ESR, ESCA and IR meas...
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Published in: | Japanese Journal of Applied Physics 1985, Vol.24 (1), p.83-86 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Thin films were polymerized by introducing tetrafluoroethylene gas into the “tail-flame” of a glow discharge of hydrogen or argon used as a carrier gas. Compared with argon, hydrogen gives a higher deposition rate at low discharge power and a lower rate at high discharge power. ESR, ESCA and IR measurements showed that films polymerized using hydrogen as a carrier gas are crosslinked to a higher degree and have more radicals than those polymerized using argon. The former films have higher tan
δ values than the latter films. These results arise from the competing processes of polymerization and ablation in the glow-discharge plasma. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/jjap.24.83 |