Partial epitaxial growth of cobalt germanides on (111)Ge

Localized  epitaxial  Co5Ge7  and  CoGe2  have  been  grown  in  cobalt  thin  films  on (111)Ge  in  the solid phase epitaxy regime. The orientation relationships between epitaxial germanides and the substrates as well as the configuration of the interfacial dislocations were analyzed by transmissi...

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Bibliographic Details
Published in:Applied physics letters 1987-11, Vol.51 (20), p.1588-1590
Main Authors: HSIEH, Y. F, CHEN, L. J, MARSHALL, E. D, LAU, S. S
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Localized  epitaxial  Co5Ge7  and  CoGe2  have  been  grown  in  cobalt  thin  films  on (111)Ge  in  the solid phase epitaxy regime. The orientation relationships between epitaxial germanides and the substrates as well as the configuration of the interfacial dislocations were analyzed by transmission  electron  microscopy (TEM) in detail.  Surface morphology was examined by scanning  electron  microscopy.  The  results  obtained  from  Read  camera  glancing  angle  x-ray diffraction and Rutherford backscattering channeling analysis were found to corroborate with those from TEM examinations.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.98563