Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2gate insulator

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Bibliographic Details
Published in:Nanotechnology 2021-06, Vol.32 (25)
Main Authors: Ryoo, Hyun-Joo, Seong, Nak-Jin, Choi, Kyu-Jeong, Yoon, Sung-Min
Format: Article
Language:English
Online Access:Get full text
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ISSN:1361-6528
DOI:10.1088/1361-6528/abcbc4