Luminescence study of rapid lamp annealing of Si-implanted InP

Luminescence of Si-implanted InP after rapid lamp annealing was studied. It was found that the intensity and energy of band-to-band room-temperature luminescence were good indicators of the quality of annealing and activation of Si donors. Shallow and deep level spectral features characteristic of S...

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Bibliographic Details
Published in:Journal of applied physics 1985-01, Vol.57 (2), p.531-536
Main Authors: KIRILLOV, D, MERZ, J. L, KALISH, R, SHATAS, S
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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Summary:Luminescence of Si-implanted InP after rapid lamp annealing was studied. It was found that the intensity and energy of band-to-band room-temperature luminescence were good indicators of the quality of annealing and activation of Si donors. Shallow and deep level spectral features characteristic of Si implantation and good annealing were observed in the low-temperature spectra. It was found that the best results could be obtained only in the case of hot implantation and lamp annealing in regimes close to the melting point of the InP, whereas room-temperature implantation and oven annealing were much less effective.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.334787