Elimination of ionized impurity scattering in heavily doped Ga sub(x)In sub(1-x)As sub(y)P sub(1-y)

Unexpectedly high hole mobilities occur in p-type layers of Ga sub(0.03)In sub(0.97)As sub(0.07)P sub(0.93) grown by liquid phase epitaxy and concurrently doped with high concentrations (10 super(17)-10 super(19) cm super(-3)) of Mn and Ge. The temperature dependence of the hole mobility indicates t...

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Published in:Applied physics letters 1985-01, Vol.47 (8), p.843-845
Main Authors: Shantharama, L G, Adams, A R, Allen, E M, Greene, P D
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Adams, A R
Allen, E M
Greene, P D
description Unexpectedly high hole mobilities occur in p-type layers of Ga sub(0.03)In sub(0.97)As sub(0.07)P sub(0.93) grown by liquid phase epitaxy and concurrently doped with high concentrations (10 super(17)-10 super(19) cm super(-3)) of Mn and Ge. The temperature dependence of the hole mobility indicates that ionized impurity scattering is insignificant. The effect is attributed to the diffusion of neutral Mn to form donor-acceptor complexes instead of isolated ionized donors and acceptors. Such a model is consistent with observed diffusion profiles into a variety of substrates from Mn-doped epilayers and the presence of ionized impurity scattering where either the donor concentration or the depth of the Mn acceptor level is such that little or no neutral Mn is present.
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title Elimination of ionized impurity scattering in heavily doped Ga sub(x)In sub(1-x)As sub(y)P sub(1-y)
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