Optical bistability and gating in metalorganic vapor phase epitaxy grown GaAs etalons operating in reflection

Nonlinear Fabry–Perot étalons of GaAs have been fabricated with metalorganic vapor phase epitaxy technology. The étalons operate in reflection mode, and have an epitaxially grown, rear dielectric mirror consisting of a stack of alternating AlAs/GaAlAs layers. Optical logic functions using a HeNe las...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1987-06, Vol.50 (22), p.1559-1561
Main Authors: SAHLEN, O, OLIN, U, MASSEBŒUF, E, LANDGREN, G, RASK, M
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Miscellaneous
Optical and optoelectronic circuits
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Nonlinear Fabry–Perot étalons of GaAs have been fabricated with metalorganic vapor phase epitaxy technology. The étalons operate in reflection mode, and have an epitaxially grown, rear dielectric mirror consisting of a stack of alternating AlAs/GaAlAs layers. Optical logic functions using a HeNe laser and optical bistability at room temperature are reported. Low switching powers and improved étalon uniformity are obtained.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97779