Quantum-confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy

We report the first observation of the quantum-confined Stark effect in InGaAs/InP multiple quantum wells grown by organometallic vapor phase epitaxy. The effect is observed both in transmission and photoconductivity measurements. The observed spectral shift agrees with the theory.

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Bibliographic Details
Published in:Applied physics letters 1987-04, Vol.50 (15), p.1010-1012
Main Authors: BAR-JOSEPH, I, KLINGSHIRN, C, MILLER, D. A. B, CHEMLA, D. S, KOREN, U, MILLER, B. I
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:We report the first observation of the quantum-confined Stark effect in InGaAs/InP multiple quantum wells grown by organometallic vapor phase epitaxy. The effect is observed both in transmission and photoconductivity measurements. The observed spectral shift agrees with the theory.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97991