Manifestations of the quantum size effect in the electrochemical behaviour of thin bismuth films

The photoemission current ( j) and the differential capacitance of the double layer ( C) on 20-200 nm thick bismuth films have been measured. The current j as a function of potential ( E) follows the 5/2 law for films of thickness exceeding 80 nm and for bulk bismuth. The current j as a function of...

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Bibliographic Details
Published in:Journal of electroanalytical chemistry and interfacial electrochemistry 1985-12, Vol.196 (1), p.157-165
Main Authors: Skundin, A.M., Zaidenberg, A.Z., Brodsky, A.M., Bagotzky, V.S.
Format: Article
Language:English
Subjects:
Chemistry
Electrochemistry
Exact sciences and technology
General and physical chemistry
Photoelectrochemistry. Electrochemiluminescence
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Summary:The photoemission current ( j) and the differential capacitance of the double layer ( C) on 20-200 nm thick bismuth films have been measured. The current j as a function of potential ( E) follows the 5/2 law for films of thickness exceeding 80 nm and for bulk bismuth. The current j as a function of E for thin films exhibits steps whose width increases as the thickness decreases. The absolute values of j and C also decrease for thinner films. These effects are manifestations of the quantum size effect in the energy spectrum of charge carriers in bismuth. Estimations of the degree of metallization of the bismuth surface are presented.
ISSN:0022-0728
DOI:10.1016/0022-0728(85)85087-7