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Layer thickness influenced irradiation effects of proton beam on MoS2 field effect transistors

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Bibliographic Details
Published in:	Nanotechnology 2021-03, Vol.32 (13), p.135204-135204
Main Authors:	Huang, Xin-nan, Shi, Jing-yuan, Yao, Yao, Peng, Song-ang, Zhang, Da-yong, Jin, Zhi
Format:	Article
Language:	English
Subjects:	electronic transport properties field effect transistors molybdenum disulfide (MoS proton beam irradiation Raman spectra
Online Access:	Get full text
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