Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides

We have measured the infrared intersubband absorption at 8.2 μm in doped GaAs/AlAs quantum well superlattices. Waveguide geometry experiments demonstrate strong absorption with 95% of the incident infrared energy being absorbed.

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Bibliographic Details
Published in:Applied physics letters 1987, Vol.50 (5), p.273-275
Main Authors: LEVINE, B. F, MALIK, R. J, WALKER, J, CHOI, K. K, BETHEA, C. G, KLEINMAN, D. A, VANDERBERG, J. M
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Description
Summary:We have measured the infrared intersubband absorption at 8.2 μm in doped GaAs/AlAs quantum well superlattices. Waveguide geometry experiments demonstrate strong absorption with 95% of the incident infrared energy being absorbed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.98223