Phase formation and reaction kinetics in the thin-film Co/GaAs system

The solid state reaction between a Co thin film and (100) GaAs was investigated using Rutherford backscattering spectrometry. At 400 °C a reacted layer of composition Co:Ga:As=2:1:1 was observed to form. This reaction product obeys diffusion controlled growth kinetics and maintains its composition f...

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Bibliographic Details
Published in:Applied physics letters 1985-01, Vol.47 (9), p.934-936
Main Authors: Yu, A. J., Galvin, G. J., Palmstro/m, C. J., Mayer, J. W.
Format: Article
Language:English
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Summary:The solid state reaction between a Co thin film and (100) GaAs was investigated using Rutherford backscattering spectrometry. At 400 °C a reacted layer of composition Co:Ga:As=2:1:1 was observed to form. This reaction product obeys diffusion controlled growth kinetics and maintains its composition for annealing (400 °C) from 15 min up to 24 h.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.95932