Transient transmission of THz metamaterial antennas by impact ionization in a silicon substrate

The picosecond dynamics of excited charge carriers in the silicon substrate of THz metamaterial antennas was studied at different wavelengths. Time-resolved THz pump-THz probe spectroscopy was performed with light from a tunable free electron laser in the 9.3-16.7 THz frequency range using fluences...

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Bibliographic Details
Published in:Optics express 2021-01, Vol.29 (1), p.170-181
Main Authors: Bejide, Matias, Li, Yejun, Stavrias, Nikolas, Redlich, Britta, Tanaka, Takuo, Lam, Vu Dinh, Tung, Nguyen Thanh, Janssens, Ewald
Format: Article
Language:English
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Summary:The picosecond dynamics of excited charge carriers in the silicon substrate of THz metamaterial antennas was studied at different wavelengths. Time-resolved THz pump-THz probe spectroscopy was performed with light from a tunable free electron laser in the 9.3-16.7 THz frequency range using fluences of 2-12 J/m . Depending on the excitation wavelength with respect to the resonance center, transient transmission increase, decrease, or a combination of both was observed. The transient transmission changes can be explained by local electric field enhancement, which induces impact ionization in the silicon substrate, increasing the local number of charge carriers by several orders of magnitude, and their subsequent diffusion and recombination. The studied metamaterials can be integrated with common semiconductor devices and can potentially be used in sensing applications and THz energy harvesting.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.405555