The effects of processing parameters on the microstructure and properties of sputter-deposited TiW thin film diffusion barriers

TiW thin films have been shown to be effective diffusion barriers in Al-Au interconnect bond systems. The diffusion barrier performance of these films can be improved by modification of the film structures through the manipulation of deposition parameters during film production. It was found that Ti...

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Bibliographic Details
Published in:Thin solid films 1987-10, Vol.153 (1), p.313-328
Main Authors: Oparowski, J.M., Sisson, R.D., Biederman, R.R.
Format: Article
Language:English
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Summary:TiW thin films have been shown to be effective diffusion barriers in Al-Au interconnect bond systems. The diffusion barrier performance of these films can be improved by modification of the film structures through the manipulation of deposition parameters during film production. It was found that TiW films produced with reactive sputtering gas mixtures of 95% Ar and 5% O 2 or 70% Ar, 25% N 2 and 5% O 2 provided the best diffusion barrier performance. However, the films deposited with oxygen exhibited low bond strengths and were therefore unreliable. The improved barrier performance of the films was due to the loss of the β-W phase and the formation of TiN and W 2N phases as well as the TiO 2 and WO 3 phases.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(87)90192-1