The amorphous Si/SiC heterojunction color-sensitive phototransistor

An amorphous Si/SiC heterojunction color-sensitive phototransistor was successfully fabricated by plasma-enhanced chemical vapor deposition. The structure is glass/ITO/a-Si(n + -i)/a-SiC(p + -i-n + )/Al. The device is a bulk barrier transistor with wide-bandgap amorphous SiC emitter and base. The ph...

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Bibliographic Details
Published in:IEEE electron device letters 1987-02, Vol.8 (2), p.64-65
Main Authors: Chang, K.C., Chun-Yen Chang, Fang, Y.K., Jwo, S.C.
Format: Article
Language:English
Subjects:
Amorphous materials
Applied sciences
Chemical vapor deposition
Electronics
Exact sciences and technology
Glass
Heterojunctions
Indium tin oxide
Optoelectronic devices
Phototransistors
Plasma chemistry
Plasma devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide
Stimulated emission
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Summary:An amorphous Si/SiC heterojunction color-sensitive phototransistor was successfully fabricated by plasma-enhanced chemical vapor deposition. The structure is glass/ITO/a-Si(n + -i)/a-SiC(p + -i-n + )/Al. The device is a bulk barrier transistor with wide-bandgap amorphous SiC emitter and base. The phototransistor revealed a very high optical gain of 40 and a response speed of 10 µs at an input light power of 5 µW and a collector current of 0.12 mA at a voltage of 14 V. The peak response occurs at 610 nm under 1-V bias and changes to 420 and 540 nm under 7- and 13-V biases, respectively.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26553