Thermal Expansion and Thermal Expansion Anisotropy of SiC Polytypes

The principal axial coefficients of thermal expansion for the (3C), (4H), and (6H) polytypes of SiC are considered to identify the structural role of the stacking layer sequence as it affects the thermal expansion. A general equation based on the fractions of cubic and hexagonal layer stacking is de...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 1987-07, Vol.70 (7), p.445-448
Main Authors: LI, Z., BRADT, R. C.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Nonmetallic Materials
Physics
Thermal expansion
thermomechanical effects and density
Thermal properties of condensed matter
Thermal properties of crystalline solids
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Summary:The principal axial coefficients of thermal expansion for the (3C), (4H), and (6H) polytypes of SiC are considered to identify the structural role of the stacking layer sequence as it affects the thermal expansion. A general equation based on the fractions of cubic and hexagonal layer stacking is developed that expresses the principal axial thermal expansion coefficients of all of the SiC polytypes. It is then applied to address the thermal expansion anisotropy of the noncubic SiC structures.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1987.tb05673.x