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Quantum size effect in semiconductor microcrystals

A growth technique of the semiconductor microcrystals in a glassy dielectric matrix has been developed. This technique permits to vary the size of the grown microcrystals in a controlled manner from some tens to thousands of angstroms. The size dependence of absorption spectra of a number of I–VII a...

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Bibliographic Details
Published in:Solid state communications 1985-12, Vol.56 (11), p.921-924
Main Authors: Ekimov, A.I., Efros, Al.L., Onushchenko, A.A.
Format: Article
Language:English
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Summary:A growth technique of the semiconductor microcrystals in a glassy dielectric matrix has been developed. This technique permits to vary the size of the grown microcrystals in a controlled manner from some tens to thousands of angstroms. The size dependence of absorption spectra of a number of I–VII and II–VI compounds grown by this technique have been studied. The size of the microcrystals being decreased, a considerable short-wave-length shift of the exciton lines and the fundamental absorption edge has been observed. This phenomenon is due to the size quantization of the free carrier and exciton energy spectra in the microcrystals.
ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(85)80025-9