Highly Reliable Organic Field-Effect Transistors with Molecular Additives for a High-Performance Printed Gas Sensor

• Published in: ACS applied materials & interfaces 2021-01, Vol.13 (3), p.4278-4283
• Main Authors: Shin, Eun-Sol, Go, Ji-Young, Ryu, Gi-Seong, Liu, Ao, Noh, Yong-Young
• Format: Article
• Language: English
• Subjects: Organic Electronic Devices
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.0c20957

Organic semiconductors (OSCs) are promising sensing materials for printed flexible gas sensors. However, OSCs are unstable in the humid air, which limits the realization of gas sensors for multiple usages. In this paper, we report a facile and effective way to improve the air stability of an OSC film to realize multiple reversibly used printed gas sensors by adding molecular additives. The tetracyanoquinodimethane (TCNQ) or 4-aminobenzonitrile (ABN) additives effectively prevent adsorption of moisture from the air on the OSC layer, thereby providing a stable gas sensor operation. The organic field-effect transistor (OFET)-based indacenodithiophene-co-benzothiadiazole with TCNQ or ABN shows highly reliable ammonia (NH3) gas sensing up to 10 ppm in air, with 23.14% sensitivity, and the gas sensor signal can recover up to 100%. In particular, the stability of gas detection is greatly improved by the additives, which can be performed in the air for 16 days. The result indicates that the elimination of moisture trapped in OSCs with molecule additives is critical in the improvement of device air/operational stabilities and the achievement of high-performance OFET-based gas sensors.