Simultaneous diffusion of zinc and indium into GaAs: a new approach for the formation of low resistance ohmic contacts to compound semiconductors

The simultaneous diffusion of zinc and indium into GaAs was performed prior to the deposition of a refractory contact metallization. This has resulted in low resistance contacts to p-type GaAs. We demonstrate that specific contact resistivities as low as 5×10−7 and 2×10−7 Ω cm2 are obtainable for no...

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Bibliographic Details
Published in:Applied physics letters 1985-01, Vol.47 (4), p.410-412
Main Authors: SHEALY, J. R, CHINN, S. R
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The simultaneous diffusion of zinc and indium into GaAs was performed prior to the deposition of a refractory contact metallization. This has resulted in low resistance contacts to p-type GaAs. We demonstrate that specific contact resistivities as low as 5×10−7 and 2×10−7 Ω cm2 are obtainable for nonalloyed and annealed contacts, respectively, using this technique. These specific contact resistances are the lowest values that have been reported for ohmic contacts to p-type GaAs. Furthermore, the apparatus used here should be easily adapted to the formation of low resistance n-type contacts by substituting for the zinc source a volatile source containing a group VI impurity such as Se or Te.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96128