Broad-area semiconductor lasers with gain-length variation for lateral mode control: the bow-tie geometry laser

A novel idea is proposed to control the spatial mode profile of broad-area semiconductor lasers in which the cumulative optical gain in the direction of light propagation is tailored by varying the effective length of the contact electrode across the lateral direction. Special interest is on a struc...

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Bibliographic Details
Published in:Journal of applied physics 1988, Vol.63 (1), p.248-250
Main Authors: SHEEM, S. K, VOJAK, B. A
Format: Article
Language:English
Subjects:
Applied sciences
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Other techniques and industries
Physics
Semiconductor lasers
laser diodes
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Summary:A novel idea is proposed to control the spatial mode profile of broad-area semiconductor lasers in which the cumulative optical gain in the direction of light propagation is tailored by varying the effective length of the contact electrode across the lateral direction. Special interest is on a structure with the highest gain near the center of the device so as to favor the lower-order lateral modes of oscillation. Preliminary experiments indicate that the concept works as intended.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.340453