Chemical etching of germanium

Epitaxial Ge is an important material for the fabrication of tandem solar cells and long wavelength photodetectors. The polishing of Ge substrates, prior to Ge epitaxy, is thus an important step. A series of etching experiments have been conducted to evaluate chemical etches for this approach. It is...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1988-08, Vol.135 (8), p.2053-2054
Main Authors: GHANDHI, S. K, AYERS, J. E
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid-fluid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Epitaxial Ge is an important material for the fabrication of tandem solar cells and long wavelength photodetectors. The polishing of Ge substrates, prior to Ge epitaxy, is thus an important step. A series of etching experiments have been conducted to evaluate chemical etches for this approach. It is found that the most satisfactory surfaces are obtained with a 2-3 min treatment in HNO sub 3 :CH sub 3 COOH:H sub 2 O in a 18:8:5 ratio by volume. 7 ref.--AA
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2096207