Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure

Electronic transport through a three-dimensionally confined semiconductor quantum well ('quantum dot') has been investigated. Fine structure observed in resonant tunneling through the quantum dot corresponds to the discrete density of states of a zero-dimensional system. (Author)

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Bibliographic Details
Published in:Physical review letters 1988-02, Vol.60 (6), p.535-537
Main Authors: REED, M. A, RANDALL, J. N, AGGARWAL, R. J, MATYI, R. J, MOORE, T. M, WETSEL, A. E
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
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Description
Summary:Electronic transport through a three-dimensionally confined semiconductor quantum well ('quantum dot') has been investigated. Fine structure observed in resonant tunneling through the quantum dot corresponds to the discrete density of states of a zero-dimensional system. (Author)
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.60.535